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Precision processing/structural evaluation is possible over a wide area of several hundred micrometers.
It achieves high positional accuracy and wide-area cross-section production, making it usable as a new large-capacity analysis application. Even small structures within a large area can be targeted for processing, enabling wide-area structural analysis.
![[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations](https://image.mono.ipros.com/public/product/image/464/2000437277/IPROS86695334060655697793.jpeg?w=280&h=280)
Microscopic structural analysis of amorphous films is possible through simulation.
Amorphous SiNx (a-SiNx) films exhibit significant changes in physical properties from semiconductors to insulators due to compositional variations such as the N/Si ratio, making them suitable for a wide range of applications, including gate insulating films for transistors. On the other hand, experimental methods capable of atomic-level microscopic structural analysis for materials with non-crystalline amorphous structures are limited. Therefore, creating and analyzing amorphous structures with various compositions and densities through simulation becomes an effective tool. This document presents examples of structural analysis of a-SiNx films using molecular dynamics calculations.
This is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core).
This report is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core) application processor. The MT6592 features an ARM Cortex-A7 processor and is marketed as a "true octa-core" SoC, equipped with a 4-core ARM MaliTM GPU, supporting Full HD displays, cameras up to 16 million pixels, multi-mode cellular modems, and dual-band 802.11n Wi-Fi, among other features. The MT6592 is manufactured using TSMC's HPM CMOS process with an 8-layer metal (7 Cu, 1 Al) structure, high-k metal gate (HKMG), and a gate length of 28nm. 【Features】 ○ Crystal orientation of the transistor channel <110> ○ Hafnium oxide (HfO2) material for the gate insulating film ○ Dual work function metal gate ○ nMOS (NiSi) and pMOS (NiSiGe) source/drain regions, and low-k interlayer insulating film For more details, please contact us or download the catalog.
