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[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis

[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis

XRD measurements in micro areas are possible.

We will introduce a case where XRD measurements were conducted by narrowing the X-ray beam to Φ400μm, allowing us to obtain crystal information targeting a specific area rather than the entire surface. In the XRD measurement results of the printed circuit board sample, Cu and BaSO4 were detected at all measurement points (1) to (3), and a peak from Au was detected at the measurement point (1), which is the electrode. This aligns well with the results from XRF measurements. Thus, it is possible to identify crystal structures by targeting regions of several hundred micrometers with different compositions and crystallinities. Measurement methods: XRD, XRF Product fields: LSI, memory, electronic components Analysis purposes: Composition evaluation, identification, structural evaluation For more details, please download the materials or contact us.

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Analysis of crystal grains below 30nm using the EBSD method.

Analysis of crystal grains below 30nm using the EBSD method.

EBSD: Electron Backscatter Diffraction

By conducting EBSD analysis on thinned samples, higher spatial resolution can be achieved compared to conventional bulk samples.

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Extreme point measurement

Extreme point measurement

XRD: X-ray diffraction method

Pole figure measurement is a method that focuses on specific crystal planes and evaluates the distribution of crystal orientations by directing X-rays from various directions onto the sample. The detector is fixed at the diffraction angle (2θ) of the crystal plane of interest, and the two parameters, α (the tilt angle of the sample) and β (the in-plane rotation angle of the sample), are varied to measure crystal planes tilted in all directions. This indicates that the crystal orientations are concentrated in the directions where high diffraction intensity is observed. Additionally, the measurement results are represented in a pole figure as shown in the diagram at the bottom right.

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[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

Microscopic structural analysis of amorphous films is possible through simulation.

Amorphous SiNx (a-SiNx) films exhibit significant changes in physical properties from semiconductors to insulators due to compositional variations such as the N/Si ratio, making them suitable for a wide range of applications, including gate insulating films for transistors. On the other hand, experimental methods capable of atomic-level microscopic structural analysis for materials with non-crystalline amorphous structures are limited. Therefore, creating and analyzing amorphous structures with various compositions and densities through simulation becomes an effective tool. This document presents examples of structural analysis of a-SiNx films using molecular dynamics calculations.

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  • Memory

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Report: Detailed Structural Analysis of Application Processor Logic

Report: Detailed Structural Analysis of Application Processor Logic

This is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core).

This report is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core) application processor. The MT6592 features an ARM Cortex-A7 processor and is marketed as a "true octa-core" SoC, equipped with a 4-core ARM MaliTM GPU, supporting Full HD displays, cameras up to 16 million pixels, multi-mode cellular modems, and dual-band 802.11n Wi-Fi, among other features. The MT6592 is manufactured using TSMC's HPM CMOS process with an 8-layer metal (7 Cu, 1 Al) structure, high-k metal gate (HKMG), and a gate length of 28nm. 【Features】 ○ Crystal orientation of the transistor channel <110> ○ Hafnium oxide (HfO2) material for the gate insulating film ○ Dual work function metal gate ○ nMOS (NiSi) and pMOS (NiSiGe) source/drain regions, and low-k interlayer insulating film For more details, please contact us or download the catalog.

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Structural analysis using Xe-plasma FIB.

Structural analysis using Xe-plasma FIB.

Precision processing/structural evaluation is possible over a wide area of several hundred micrometers.

It achieves high positional accuracy and wide-area cross-section production, making it usable as a new large-capacity analysis application. Even small structures within a large area can be targeted for processing, enabling wide-area structural analysis.

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